SI3905DV
v ds (v) r ds(on) ( ) i d (a) 8 0.125 @ v gs = 4.5 v 2.5 8 0.175 @ v gs = 2.5 v 2.0 0.265 @ v gs = 1.8 v 1.7 tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 8 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a, b t a = 25 c i d 2.5 a continuous drain current (t j = 150 c) a, b t a = 70 c i d 2.0 a pulsed drain current i dm 7 a continuous diode current (diode conduction) a, b i s 1.05 maximum power dissipation a, b t a = 25 c p d 1.15 w maximum power dissipation a , b t a = 70 c p d 0.73 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 5 sec r thja 93 110 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 130 150 c/w maximum junction-to-lead steady state r thjl 75 90 notes a. surface mounted on fr4 board. b. t 5 sec product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 6.4 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 6.4 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 5 a dis os r i a v gs = 4.5 v, i d = 2.5 a 0.103 0.125 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 2.0 a 0.146 0.175 v gs = 1.8 v, i d = 1 a 0.205 0.265 forward transconductance a g fs v ds = 4.5 v, i d = 2.5 a 5.3 s diode forward voltage a v sd i s = 1.05 a, v gs = 0 v 0.79 1.1 v dynamic b total gate charge q g v 5v v 45v i 25a 4.2 6 c gate-source charge q gs v ds = 5 v, v gs = 4.5 v, i d = 2.5 a 0.45 nc gate-drain charge q gd 0.90 turn-on delay time t d(on) v5vr5 10 15 rise time t r v dd = 5 v, r l = 5 i1av 45vr6 47 70 ns turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 28 45 ns fall time t f 34 50 source-drain reverse recovery time t rr i f = 1.05 a, di/dt = 100 a/ s 20 40 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3905DV product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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